http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113161323-B

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filingDate 2021-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113161323-B
titleOfInvention Semiconductor structure and method of making the same
abstract Embodiments of the present invention provide a semiconductor structure and a manufacturing method thereof, including: a substrate and a bonding pad on the substrate, wherein the substrate exposes a surface of the bonding pad; a bonding post is positioned on a surface of the bonding pad away from the substrate and in contact with the bonding pad; The first device is located on the substrate and is spaced apart from the bonding column; the solder pad is located on the surface of the first device away from the substrate; the dielectric layer surrounds the sidewall of the bonding column; the electromagnetic shielding layer is located at least on the top surface of the bonding column and the dielectric layer The top surface and the dielectric layer are far away from the sidewall of the bonding column; the lead, one end of the lead is electrically connected to the pad, and the other end of the lead is electrically connected to the electromagnetic shielding layer. The embodiments of the present invention are beneficial to improve the connection strength between the lead wire, the electromagnetic shielding layer and the bonding pad, and prevent the electrical interference between the bonding post and the first device, so as to improve the stability of the semiconductor structure.
priorityDate 2021-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 33.