| abstract |
The invention belongs to the technical field of display devices, and in particular relates to a quantum dot light emitting diode, comprising a hole transport layer, a quantum dot light emitting layer and a first carbon quantum dot layer, wherein the first carbon quantum dot layer is disposed on the hole transport layer. Between the layer and the quantum dot light-emitting layer, the first carbon quantum dot layer includes several first carbon quantum dots. The quantum dot light emitting diode provided by the present invention has good charge transfer performance, high conductivity, and stable performance of the quantum dot light emitting diode. |