http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113130811-A

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filingDate 2019-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2c44dbb884ade257e91baa1d739d06b
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publicationDate 2021-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113130811-A
titleOfInvention A kind of quantum dot light-emitting diode and preparation method thereof
abstract The invention discloses a quantum dot light-emitting diode and a preparation method thereof. The preparation method includes: providing an anode; forming a quantum dot light-emitting layer on the anode; forming a metal electrode layer on the quantum dot light-emitting layer; oxidizing the metal electrode layer to form a metal oxide layer; A cathode is formed on the metal oxide layer to obtain a quantum dot light-emitting diode. In the present invention, a layer of metal electrodes is added on the basis of the existing quantum dot light-emitting diodes, and the metal electrode layer is oxidized through baking treatment to form a metal oxide layer, and the metal oxide layer can play the role of Prevent the effect of water and oxygen corrosion, thereby improving the life of the device. In addition, the metal oxide layer can be used as a transition layer between the cathode and the electron transport layer, and electrons can be injected into the electron transport layer by tunneling, which is conducive to the injection of electrons in the cathode into the electron transport layer, thereby improving the electron injection efficiency, and then Improve the luminous efficiency of the device.
priorityDate 2019-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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