| abstract |
The pattern forming method includes: (a) forming a primer layer on a substrate, wherein the primer layer has a thickness of 5 microns or greater; (b) forming a photoresist layer on the underlayer, wherein the photoresist layer is formed from a photoresist composition comprising a silicon-containing polymer, a photoacid generator, and a solvent, wherein the silicon-containing polymer comprises as polymerized units a monomer of formula (I): wherein: r 1 Independently selected from H, F, OH, C1-C6 alkyl, C1-C6 haloalkyl, C1-C6 hydroxy-haloalkyl, C1-C6 alkoxy, or C1-C6 haloalkoxy; r 2 Independently of each otherSelected from H or F; r 3 Independently selected from H, F, CH 3 、CF 3 、CHF 2 Or CH 2 F；R 4 Comprising an acid cleavable group; and m is an integer of 0 to 2; (c) patternwise exposing the photoresist layer to activating radiation; (d) developing the exposed photoresist layer to form a photoresist pattern; and (f) transferring a pattern of the photoresist pattern into the underlayer using the photoresist pattern as an etching mask. The present invention is particularly useful for forming three-dimensional patterns such as step patterns used in the formation of semiconductor devices. |