http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113097129-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76882 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5386 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113097129-B |
| titleOfInvention | Manufacturing method of conductive structure, conductive structure and machine equipment |
| abstract | The application discloses a manufacturing method of a conductive structure, the conductive structure and machine equipment, wherein the manufacturing method of the conductive structure comprises the following steps: depositing a seed crystal layer on the inner surface of a guide hole and/or a groove to be filled on a wafer; and heating the upper surface and the lower surface of the wafer to enable the seed crystal layer to reflow so as to remove the guide hole and/or the groove opening to be filled and the overhang bulge structure on the side wall. The conductive structure adopts the double heat sources to heat from the upper side and the lower side of the wafer, so that the temperature rise of the wafer is more uniform and faster, the overhanging convex structures at the notches and the side walls are reduced, the process window of seed crystal layer backflow is expanded, the stress of the wafer caused by temperature rise change is reduced, the time consumed by the process of heating from the upper side and the lower side of the wafer by adopting the double heat sources can be obviously reduced, and the production efficiency is improved. |
| priorityDate | 2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.