http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113092545-B

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-125
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12
filingDate 2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113092545-B
titleOfInvention A preparation method of graphene MEMS gas sensor based on CuO/In2O3 modification
abstract The invention discloses a method for preparing a CuO/In 2 O 3 modified graphene MEMS gas sensor, which belongs to the field of gas sensitive sensors. The method includes: 1. Preparation of nano-CuO; 2. Preparation of nano-In 2 O 3 ; 3. Preparation of rGO-CuO/In 2 O 3 ; 4. Preparation of AlN ceramic substrate; 5. Preparation of silver interdigitated electrodes ; 6. Preparation of copper heating electrodes; 7. Preparation of single crystal silicon substrate; 8. Coating of gas-sensitive materials. The present invention obtains the rGO-CuO/In 2 O 3 gas-sensing material through the step-by-step method of preparing a single material and one-step ultrasonic hydrothermal preparation of the composite material. Problems such as product residues make the ratio between the single materials in the prepared composite material controllable and more accurate. At the same time, it is supplemented by a newly designed composite multi-layer sensor chip structure, which enables it to have excellent working performance under the condition of extremely small size and extremely low power consumption, and has the advantages of high degree of automation and good integration.
priorityDate 2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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