http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113088274-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b02fb4923b61a06d4b0c40ec8dd01d2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2019-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_841e0670070c8e77b9950899e22d8119 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a652b30c9edd759e6b105790762d90f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4048e46e6f83f00fff6eb4a5bb611b77 |
| publicationDate | 2021-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113088274-A |
| titleOfInvention | Quantum dot thin film ligand exchange method and quantum dot light-emitting diode preparation method |
| abstract | The invention belongs to the technical field of quantum dots, and particularly relates to a quantum dot thin film ligand exchange method and a preparation method of a quantum dot light-emitting diode. The quantum dot film ligand exchange method includes the following steps: providing an initial quantum dot film, and the surface of the quantum dots in the initial quantum dot film is bound with a first ligand; using atomic layer deposition technology, the second ligand in the gas phase is Depositing on the surface of the initial quantum dot film, performing ligand exchange, and obtaining a quantum dot film with a second ligand bound on the surface. The quantum dot thin film ligand exchange method does not leave excess reactants on the quantum dot thin film, and also does not cause damage to other film layers under the quantum dot thin film, and the process is simple and the production efficiency is improved. It has a wide range of application prospects in the field of thin film technology. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115109467-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023053312-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023053311-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115700270-A |
| priorityDate | 2019-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.