http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113087720-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0cc90a4cda4760c9a104d5acb5af3019 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-626 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D495-04 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D495-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 |
filingDate | 2021-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cdafe8abaac109f16c98dd4e11f27fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f107b9b25cbf6fff8c8852cdd614698c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_273e16292fd0a0d24834494d0eb3b533 |
publicationDate | 2021-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-113087720-A |
titleOfInvention | A class of n-type organic semiconductor materials based on benzothieno[3,2-b]benzothiophene and their preparation methods and applications |
abstract | The invention discloses a class of n-type organic semiconductor materials based on benzothieno[3,2-b]benzothiophene and a preparation method and application thereof. The structural formula of the n-type organic semiconductor material is as follows: Among them, A is an electron withdrawing group. The material of the present invention is characterized in that the synthesis steps are few, the synthesis process is simple, the cost of raw materials is low, and the molecular structure and optoelectronic properties can be adjusted very strongly. The material of the present invention can be used as a semiconductor layer material of an organic field effect transistor, and can overcome the shortcomings of the existing materials such as low electron mobility and low switching ratio; at the same time, this type of material has good properties as an electron acceptor material for the active layer of an organic solar cell. application potential. |
priorityDate | 2021-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.