http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113086975-B

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L75-04
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-184
filingDate 2021-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113086975-B
titleOfInvention A kind of graphene microsphere and high thermal conductivity gasket prepared by using graphene microsphere
abstract The present invention provides a method for preparing graphene microspheres, comprising the following steps: 1) using one or more of graphene thermal conductive films, artificial graphite thermal conductive films, and highly oriented graphite thermal conductive films as a base material, and pulverizing them into graphene powder; 2) Preparation of graphene microspheres by sol method: a) dissolving resorcinol in formaldehyde solution; then adding graphene powder prepared in step 1), heating and stirring to obtain a mixed solution; b) heating liquid paraffin, and then The mixed solution of step a) is added to the liquid paraffin to continue stirring to obtain the product, the product is filtered, the filter residue is collected and washed to obtain a solid product; c) the solid product obtained in step b) is sequentially subjected to baking, high temperature carbonization and high temperature Graphitization to obtain graphene microspheres. The invention also prepares a graphene microsphere high thermal conductivity gasket based on the graphene microspheres, improves the problem of low thermal conductivity of the traditional thermal conductivity gasket, and makes it possible to prepare a high thermal conductivity gasket material.
priorityDate 2021-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.