http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113078204-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2021-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113078204-B |
| titleOfInvention | A kind of gallium nitride 3D-RESURF field effect transistor and its manufacturing method |
| abstract | The invention relates to the technical field of semiconductor devices, in particular to a gallium nitride 3D-RESURF field effect transistor and a preparation method thereof. The present invention introduces a P-type gallium nitride electric field modulation region in a traditional gallium nitride HEMT device by means of grooving and secondary epitaxy. A p-n junction composed of p-type gallium nitride-two-dimensional electron gas is formed at the drift region, and the depletion and expansion of the space charge region of the p-n junction is introduced in the direction parallel to the gate width when the device blocks the withstand voltage. The electric field intensity component changes the direction of the original electric field, so that the electric field peak on the drain side of the gate is alleviated, and the electric field intensity is significantly reduced; at the same time, the p-n junction is used to deplete the two-dimensional electron gas, which reduces the leakage current of the device and improves the unit drift of the device. zone length pressure capability. The invention realizes a new electric field modulation mode different from the traditional field plate technology by introducing p-type gallium nitride-two-dimensional electron gas p-n junction into the gallium nitride HEMT device, and the new structure is used to improve the breakdown of the device. voltage while reducing the on-resistance of the device. |
| priorityDate | 2021-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.