http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113078105-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5b43f4a86fc8f7ad28689d833acac53 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1068 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 |
| filingDate | 2021-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe22f73a870c2026a23bcda999660824 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9d0fb21356de8cc45305dd571277a7a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d819350e3c17a6a769220e815cfb7d9f |
| publicationDate | 2021-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113078105-A |
| titleOfInvention | Preparation method of mask structure, semiconductor structure and preparation method thereof |
| abstract | The invention relates to a preparation method of a mask structure, a semiconductor structure and a preparation method thereof, including: a preparation method of the mask structure, comprising: forming a first mask layer, a first buffer layer, a first mask layer, a first buffer layer, a two mask layers and a second buffer layer; patterning the second buffer layer and the second mask layer to obtain a first pattern structure, the first pattern structure exposing part of the first buffer layer; in the first pattern structure forming a first mask pattern on the sidewall; forming a carbon plasma layer on the upper surface of the exposed first buffer layer as a protective layer; removing the first pattern structure; and removing the remaining protective layer. Therefore, when the first pattern structure is removed by etching, the exposed first buffer layer will not be etched, thereby avoiding the influence of uneven thickness of the first buffer layer on the pattern shape after the first mask pattern is transferred to the first buffer layer. The pattern topography of the first mask pattern is completely transferred to the next layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022205693-A1 |
| priorityDate | 2021-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.