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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-40
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48
filingDate 2021-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113054110-B
titleOfInvention Near-infrared narrow-band selective photodetectors
abstract The invention discloses a near-infrared narrow-band selective photoelectric detector. It includes a substrate, a transparent electrode layer, a hole transport layer, a visible light filter layer, an electronic filter layer, a near-infrared active layer, a hole blocking layer, and a metal electrode layer; Hole transport layer, visible light filter layer, electron filter layer, near-infrared active layer, hole blocking layer, metal electrode layer; the visible light filter layer is an organic-inorganic hybrid perovskite material, and the electron filter layer It is a wide-bandgap semiconductor material, which shields the visible light signal through the superposition of the visible light filter layer, the electronic filter layer and the near-infrared active layer, and realizes the selective response to the narrow-band near-infrared light.
priorityDate 2021-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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