http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113054110-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 |
filingDate | 2021-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2022-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2022-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-113054110-B |
titleOfInvention | Near-infrared narrow-band selective photodetectors |
abstract | The invention discloses a near-infrared narrow-band selective photoelectric detector. It includes a substrate, a transparent electrode layer, a hole transport layer, a visible light filter layer, an electronic filter layer, a near-infrared active layer, a hole blocking layer, and a metal electrode layer; Hole transport layer, visible light filter layer, electron filter layer, near-infrared active layer, hole blocking layer, metal electrode layer; the visible light filter layer is an organic-inorganic hybrid perovskite material, and the electron filter layer It is a wide-bandgap semiconductor material, which shields the visible light signal through the superposition of the visible light filter layer, the electronic filter layer and the near-infrared active layer, and realizes the selective response to the narrow-band near-infrared light. |
priorityDate | 2021-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.