| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 |
| filingDate |
2021-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c10e04aa82cf8123b679694e78952b8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8285a629929c6e733284cf3fd6f13057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf68efb914ba906c8eecb42fe369600d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c41b61aa7a2043a8e73cff24612f43d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46b6e4dee58d38cff8b29dd946ae52d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07553e6e3344e4d96497cada4b2a1b92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2017b080db5e0983bc0f6bdedf4fa4e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_727d4f1ab506436c060d006fae3f1b7a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c8787675ceeb706f9019035e42bdcd5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5def37f5f4e1abfa17f49bf53d9163a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d22e6750610b1c74f77628d889362e0c |
| publicationDate |
2021-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113053882-A |
| titleOfInvention |
Integrated circuit device and method of forming the same |
| abstract |
A transistor includes a gate structure having a first gate dielectric layer and a second gate dielectric layer. A first gate dielectric layer is disposed over the substrate. The first gate dielectric layer includes a first type of dielectric material having a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer includes a second type of dielectric material having a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than the dielectric constant of silicon oxide. Embodiments of the present invention also relate to semiconductor devices and methods of forming the same. |
| priorityDate |
2020-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |