| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D179-08 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D179-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-1071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-165 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2019-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4ef971375adcb2d2860a2979f298581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa4a6ca165ae3663fcef0fe1cf019702
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a2e0115cc9c856337f243fdcfb45e33 |
| publicationDate |
2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113016062-A |
| titleOfInvention |
Layer-by-layer growth method of conformal film |
| abstract |
Techniques herein include methods of forming a conformable film on a substrate including a semiconductor wafer. Conventional film forming techniques can be slow and expensive. The methods herein include depositing a self-assembled monolayer (SAM) film on the substrate. The SAM film may include an acid generator configured to generate an acid in response to a predetermined stimulus. A polymer film is deposited on the SAM film. The polymer film is soluble in a predetermined developer and is configured to change solubility in response to exposure to the acid. The acid generator is stimulated and generates an acid. Diffusing the acid into the polymer film. Developing the polymer film with the predetermined developer to remove a portion of the polymer film that is not protected from the predetermined developer. These method steps may be repeated as many times as desired to grow an aggregated film layer by layer. |
| priorityDate |
2018-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |