| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01044 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G1-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C22-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2019-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9365fc730b17bc693c3a48b3df7c2fc5 |
| publicationDate |
2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113016056-A |
| titleOfInvention |
Atomic layer wet etch using self-limiting and solubility-limited reactions |
| abstract |
A processing system and platform for improving both micro and macro uniformity of a material during etching is disclosed herein. These improvements can be accomplished by forming and dissolving a thin self-limiting layer on the surface of the material using atomic layer wet etching (ALE) techniques. For etching of polycrystalline materials, these self-limiting reactions can be used to prevent such roughening of the surface during etching. Thus, as disclosed herein, the wet ALE process uses a sequential self-limiting reaction to first modify the surface layer of the material and then selectively remove the modified layer. |
| priorityDate |
2018-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |