http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113013163-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be61cee18c50916a3fa39b7f5d721be9
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
filingDate 2021-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b257e85da11ebecc980be228b2a5a17
publicationDate 2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113013163-A
titleOfInvention Micro-display driving chip structure and manufacturing process thereof
abstract A micro display driving chip structure and a manufacturing process thereof belong to the technical field of micro display driving chips, and the micro display driving chip structure comprises a semiconductor substrate, and an MOSFET module and a polycrystalline silicon thin film transistor module which are arranged on the semiconductor substrate, wherein a monocrystalline silicon active area is arranged on the semiconductor substrate, the MOSFET module is arranged on the monocrystalline silicon active area, shallow trench isolation structures are respectively arranged on two sides of the monocrystalline silicon active area, a polycrystalline silicon active area is arranged above one shallow trench isolation structure, and the polycrystalline silicon thin film transistor module is arranged on the polycrystalline silicon active area.
priorityDate 2021-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708

Total number of triples: 15.