http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112994646-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ffc69cd849b0908ff38ce247edecd9c7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H2003-023 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-02 |
| filingDate | 2020-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f19f8fc0d934d4cb1da2b7216db299ac |
| publicationDate | 2021-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112994646-A |
| titleOfInvention | A large-scale low-stress single crystal nitride thick film structure and preparation method thereof |
| abstract | The invention discloses a large-scale low-stress single crystal nitride thick film structure, comprising a substrate and a single crystal nitride thick film grown on the substrate; a channel is etched on the substrate, and the The channel divides the surface of the substrate into a plurality of discrete regions; the depth of the channel is greater than the thickness of the single crystal nitride thick film. The single crystal nitride film grown on the channel-treated substrate has the characteristics of large size, large film thickness, low stress, no curling and no cracks. The invention also discloses a method for preparing the above-mentioned large-size low-stress single crystal nitride thick film structure, which comprises patterning a channel on a large-size substrate, and dividing the surface of the substrate into a plurality of independent parts by etching the channel. In the discontinuous region, nitride growth is carried out, which reduces the stress accumulation of large-size single-crystal nitride during the epitaxial growth process, and solves the problem that the current large-size single-crystal nitride thick film is easy to curl and crack. |
| priorityDate | 2020-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.