| abstract |
This application is entitled "High Voltage Extended Drain MOS (EDMOS) Nanowire Transistors." Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device includes a substrate, a source region over the substrate, a drain region over the substrate, and a semiconductor body extending from the source region to the drain region. In an embodiment, the semiconductor body has: a first region having a first conductivity type; and a second region having a second conductivity type. In an embodiment, the semiconductor device further includes a gate structure over the first region of the semiconductor body, wherein the gate structure is closer to the source region than the drain region. |