http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112992895-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02B70-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M3-155 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M3-155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252 |
| filingDate | 2021-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2023-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2023-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112992895-B |
| titleOfInvention | Preparation method of wafer structure of GaN-based switch integrated unit and GaN-based switch transistor |
| abstract | The invention provides a method for preparing a wafer structure of a GaN-based switch integrated unit and a GaN-based switch transistor, wherein the preparation method includes: forming several N wells on the P-type substrate; A plurality of epitaxial layers are epitaxially epitaxial on the bottom; based on the plurality of epitaxial layers, the device layer of each GaN-based switch transistor is formed; the device layer of the first GaN-based switch transistor is formed on the N well, and the second GaN-based switch transistor is formed on the N well. The device layer of the GaN-based switch transistor is formed on the P-type substrate outside the N well; the device layer of the first GaN-based switch transistor and the device layer of the second GaN-based switch transistor are respectively formed. A substrate connecting portion and a second substrate connecting portion. The invention takes into account the integration requirements of the high-side tube and the low-side tube, and the consistency of substrate voltage changes of the high-side tube and the low-side tube. |
| priorityDate | 2021-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.