http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112992668-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| filingDate | 2021-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112992668-B |
| titleOfInvention | Processing method of semiconductor structure and semiconductor structure |
| abstract | The invention relates to the technical field of semiconductor structure preparation processes, in particular to a semiconductor structure and a processing method thereof. The processing method comprises forming a photoresist layer on the stacked structure deposited with the silicon nitride layer; arranging a first light source and a second light source above the mask, wherein the first light source exposes the photoresist layer at a first incident angle, and the second light source exposes the photoresist layer at a second incident angle; developing to form a dovetail groove; taking the dovetail groove opening as a mask, and carrying out plasma etching on the silicon nitride layer; carrying out first plasma treatment on the photoresist layer, taking the residual photoresist layer as a mask, and carrying out plasma etching on the silicon nitride layer positioned outside the photoresist layer so as to form a first step structure at the opening of the silicon nitride layer; carrying out (N + 1) th treatment on the residual photoresist layer after the Nth plasma treatment to form (N + 1) th step structures at the opening of the silicon nitride layer; the metal layer is formed on the surface of the silicon nitride layer with a plurality of steps, so that the silicon nitride layer is not easy to break. |
| priorityDate | 2021-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.