http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112946450-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9b4f68e82c55e67d82a53c3a61686bd4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2619 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2021-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3e1ce809f255204cc185f52e0d56fb3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ff14c7eb695b93b3b8c385b2fa290ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39ebd6ddd1581af6755c6febb4fa8e0d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fcf417b3787188556aa9cfcf6ada96f |
| publicationDate | 2021-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112946450-A |
| titleOfInvention | Power semiconductor device convenient for junction temperature detection and junction temperature measuring method thereof |
| abstract | A power semiconductor device and its junction temperature detection method convenient to the junction temperature detects, the said power semiconductor device is IGBT device or MOSFET device, the said semiconductor device includes at least two unit cells, wherein at least one unit cell is the junction temperature monitoring unit, other unit cells are totally the same with IGBT device or MOSFET device structure; the junction temperature monitoring unit is structurally different from an IGBT device or an MOSFET device in that an anode is metalized on the surface of a P + contact area, and a cathode is metalized on the surface of an N + source area. The junction temperature monitoring unit is directly manufactured and integrated in the power semiconductor chip, so that the junction temperature value of the power semiconductor device can be directly measured in real time, and the real-time accurate value can be obtained. |
| priorityDate | 2021-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.