http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112909174-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2021-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112909174-B |
| titleOfInvention | A kind of P-type doped halide perovskite semiconductor and preparation method thereof |
| abstract | The invention belongs to the field of halide perovskite semiconductors, in particular to a P-type doped halide perovskite semiconductor and a preparation method thereof. The semiconductor is composed of ABX 3 -type halide perovskite or its derivatives and P-type doped The P-type dopant is composed of positive monovalent cation D A , positive monovalent cation D DB , negative monovalent anion D X , halogen or pseudo-halogen atom D DX ; D A is grown on perovskite or its derivatives The A site of the compound, D DB grows on the B site of the perovskite or its derivative as a doping element, and causes the perovskite or its derivative to generate an X-site vacancy, and D X occupies the X of the perovskite or its derivative. As the doping element, DDX occupies the X-site vacancy caused by the doping element DDB, and causes the ABX 3 -type halide perovskite or its derivatives to generate holes, forming a P-type doped halide perovskite semiconductor. The invention breaks through the short board of the P-type lattice doped halide perovskite semiconductor, and facilitates the further development of the halide perovskite semiconductor electronic/optoelectronic device. |
| priorityDate | 2021-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.