http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112909174-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fefd66fdbc3870bbaa8e5a4f87bdb0a |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 |
filingDate | 2021-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_610c30093ea343afbbdccd0213bec146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f12f952e375af24bb9c8ae131c5e5e4a |
publicationDate | 2021-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-112909174-A |
titleOfInvention | P-type doped halide perovskite semiconductor and preparation method thereof |
abstract | The invention belongs to the field of halide perovskite semiconductors, in particular to a P-type doped halide perovskite semiconductor and a preparation method thereof. The semiconductor is composed of ABX 3 -type halide perovskite or its derivatives and P-type doped The P-type dopant is composed of positive monovalent cation D A , positive monovalent cation D DB , negative monovalent anion D X , halogen or pseudo-halogen atom D DX ; D A is grown on perovskite or its derivatives The A site of the compound, D DB grows on the B site of the perovskite or its derivative as a doping element, and causes the perovskite or its derivative to generate an X-site vacancy, and D X occupies the X of the perovskite or its derivative. As the doping element, DDX occupies the X-site vacancy caused by the doping element DDB, and causes the ABX 3 -type halide perovskite or its derivatives to generate holes, forming a P-type doped halide perovskite semiconductor. The invention breaks through the short board of the P-type lattice doped halide perovskite semiconductor, and facilitates the further development of the halide perovskite semiconductor electronic/optoelectronic device. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115044982-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115044982-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113788629-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113788629-A |
priorityDate | 2021-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 81.