http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112909172-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-478 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate | 2021-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112909172-B |
| titleOfInvention | A Solar-Blind Deep Ultraviolet Multilevel Nonvolatile Memory Based on Organic Field-Effect Transistors |
| abstract | The invention discloses a solar blind area deep ultraviolet light multi-level non-volatile memory based on organic field effect transistors, which comprises a substrate serving as a gate electrode, and a gate insulating layer, a modification layer, a The organic semiconductor layer is provided with a source electrode and a drain electrode. The programming voltage and the erasing voltage of the memory are in the same direction, and the erasing voltage is greater than the programming voltage. The memory of the present invention provides a new strategy for the preparation of a high-selectivity and high-performance solar-blind area deep-ultraviolet light monitor that is not disturbed by long-wavelength ultraviolet light and visible light, and the programming voltage and erasing voltage in the same direction can simplify the memory The working power supply, and the multi-level storage also makes it significantly increase the possibility of practical application in terms of low-cost fabrication. |
| priorityDate | 2021-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.