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filingDate 2020-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-112908964-A
titleOfInvention Semiconductor element with stress release characteristic and preparation method thereof
abstract The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor element is provided with a semiconductor substrate, a stress release structure and a conductive structure, wherein the stress release structure is provided with a conductive frame and a plurality of isolation columns, the conductive frame is positioned on the semiconductor substrate, the isolation columns are positioned in the conductive frame, the conductive structure is provided with a supporting part, a conductive part and a plurality of spacers, the supporting part is positioned on the stress release structure, the conductive part is arranged adjacent to the supporting part, and the spacers are attached to two sides of the conductive part. A width of the conductive frame is equal to a width of a bottom of the conductive portion.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113611680-A
priorityDate 2019-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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