| abstract |
An integrated circuit including an integrated standard cell structure is provided. The integrated circuit includes a first standard cell including a first p-type transistor, a first n-type transistor, a first gate stack intersecting the first and second active regions, a first gate stack on the first gate stack a first extended source/drain contact on the side, a first normal source/drain contact on a second side of the first gate stack, a first gate via connected to the first gate stack, and connected to The first source/drain path of the first normal source/drain contact; the second standard cell adjacent to the first standard cell includes a second p-type transistor, a second n-type transistor, and the first and second standard cells. A second gate stack intersecting the two active regions, and a second gate via connected to the second gate stack; an input wiring connected to the first gate via; and at the same level as the input wiring to connect the first gate Output wiring for the source/drain path and the second gate path. |