http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112885774-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2019-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112885774-B |
| titleOfInvention | Method for forming high aspect ratio contact holes |
| abstract | The present invention provides a method for forming a high aspect ratio contact hole, which includes the steps of: providing a substrate, forming a dielectric layer on the substrate, the dielectric layer including a non-easy over-etching region and an easy over-etching region, and the medium layer includes At least two sub-dielectric layers, an auxiliary layer is arranged between the sub-dielectric layers, the auxiliary layer is located in the easy over-etching area, the sub-dielectric layer is located in the non-easy over-etching area, and the etching rate of the etching substance to the auxiliary layer is lower than that of the auxiliary layer. The etching rate of the dielectric layer; a patterned mask layer is formed on the dielectric layer, the mask layer has a pattern window, and the pattern window exposes the dielectric layer; using the mask layer as a blocking layer, the dielectric layer and the auxiliary layer are etched layer to form high aspect ratio contact holes. The advantage of the present invention is that the auxiliary layer is added to the over-etching region of the dielectric layer to enhance the resistance of the region to plasma bombardment, so that the region will not be over-etched by the plasma, and will not cause damage to the plasma. The subsequent filling of the conductive material has an effect, which greatly improves the device performance. |
| priorityDate | 2019-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.