| abstract |
The invention provides a preparation method of an AZO target material grain size used for a thin-film solar cell, which belongs to the technical field of photoelectric material preparation, and comprises the following steps of S1, wet grinding, S2, mixed powder slurry drying and granulating, S3, cold isostatic pressing zinc-aluminum oxide target material forming, S4, separation of the zinc-aluminum oxide target material from a rubber mold, S5, fine shaping and S6, sintering and compacting, and the like, wherein S1 is formed by wet grinding: adding a certain amount of grinding balls, a dispersing agent for SDN6800 wet ball milling and a certain proportion of deionized water into a stirring ball mill, adding zinc oxide powder with the purity of more than 99.95% and alumina powder with the purity of more than 99.95% into the stirring ball mill for mixing and stirring, adding a polyvinyl alcohol binder aqueous solution after stirring for several hours, and continuously stirring to obtain zinc oxide-aluminum powder slurry; according to the embodiment of the invention, the level of the zinc-aluminum oxide target material crystal grain less than 25um can be obtained, and excellent electrical and optical properties can be exerted in a thin-film solar cell. |