http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112853492-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-16 |
| filingDate | 2019-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112853492-B |
| titleOfInvention | A kind of SnSe/CNT high temperature flexible thermoelectric thin film material and preparation method thereof |
| abstract | The invention relates to the field of functional thin film materials, in particular to a SnSe/CNT high temperature flexible thermoelectric thin film material and a preparation method thereof. The composite film is prepared by physical vapor deposition technology, so that a certain crystallographic direction of the selenide grain is parallel to the axis direction of the CNT tube bundle to form a flexible composite film material with a nanoscale porous structure with a certain out-of-plane orientation. The material includes a carbon nanotube film matrix and a SnSe functional film uniformly deposited on the surface of the carbon nanotube bundle. The specific crystallographic direction of the SnSe grains is parallel to the groove and axis direction of the CNT tube bundle, and the adjacent grains are oriented at a small angle. The grain boundary is transformed to form a three-dimensional composite network with a nanoporous structure. The SnSe/CNT high temperature flexible thermoelectric material of the invention has relatively good thermoelectric performance and flexibility, fills the vacancy of the high temperature flexible thermoelectric thin film material, and provides a way of thinking for the research of medium and high temperature flexible thermoelectric materials. |
| priorityDate | 2019-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.