http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112843481-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N2005-066 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B28-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N5-0613 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61N5-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-00 |
| filingDate | 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112843481-B |
| titleOfInvention | Preparation method and application of hot-pressed photonic polycrystalline semiconductor |
| abstract | The invention relates to the technical field of new materials, relates to polycrystalline semiconductor materials and the technical field of intelligent wearing, and particularly relates to a preparation method and application of a hot-pressed photonic polycrystalline semiconductor. A preparation method of a hot-pressed photonic polycrystalline semiconductor at least comprises the following steps: (1) mixing a solid inorganic substance and a rare earth salt compound, firing to obtain a fired mixture A, transferring the fired mixture A into a reaction kettle for reaction for a period of time, cooling, and grinding to obtain a powder material B; (2) and heating the carrier, adding the surface treatment agent and the powder material B, stirring, then sending into an extruder for extrusion granulation, and drying to obtain the hot-pressed photonic polycrystalline semiconductor. According to the invention, by reasonably setting the firing temperature, the reaction temperature and the reaction pressure, the hot-pressing photonic polycrystalline semiconductor material prepared by the method in the technical scheme has high yield and good mechanical strength, and can be applied to intelligent wearing articles. |
| priorityDate | 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.