abstract |
The present invention provides a semiconductor epitaxial structure and its application and manufacturing method. The semiconductor epitaxial structure includes a substrate; a first gallium nitride layer is formed on the substrate, wherein the first gallium nitride layer is formed by physical vapor The second gallium nitride layer is formed on the first gallium nitride layer. Through the semiconductor epitaxial structure provided by the present invention, the quality of the semiconductor epitaxial structure can be improved. |