http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112756006-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2203-0277 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-1004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J27-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B3-042 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J35-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J27-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B3-04 |
| filingDate | 2019-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112756006-B |
| titleOfInvention | Titanium nitride/gallium nitride heterostructure material and preparation method and application thereof |
| abstract | The invention provides a method for preparing a titanium nitride/gallium nitride heterostructure material. The invention also provides a titanium nitride/gallium nitride heterostructure material prepared by the method, wherein the titanium nitride/gallium nitride heterostructure material is in a one-dimensional porous nanorod shape, and the length-diameter ratio of the one-dimensional porous nanorod is 1.5:1-20: 1. The invention also provides the application of the titanium nitride/gallium nitride heterostructure material or the titanium nitride/gallium nitride heterostructure material prepared by the method in the field of photocatalysis. The titanium nitride/gallium nitride heterostructure material is a one-dimensional porous nanorod on the macroscopic view, has a high specific surface area, is favorable for enhancing light absorption and photoproduction charge separation by compounding a surface plasmon titanium nitride material and a semiconductor gallium nitride material, and can be applied to the photocatalysis field such as the photocatalysis water decomposition field, the photocatalysis degradation field or the photocatalysis reduction field. |
| priorityDate | 2019-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.