http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112750944-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5f00018260e899175ec80d78f71b55a4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22 |
| filingDate | 2019-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a155053b3028527adb179f429c6a123e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d229a47ee045d0175d38f4e46c356425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acec8feb910416d2e7fc0c4ed2da4aaa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6d9f9fda45e06c35234a29f97da22b9 |
| publicationDate | 2021-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112750944-A |
| titleOfInvention | Magnetic tunnel junction structure and magnetic random access memory |
| abstract | The present application provides a magnetic tunnel junction structure and a magnetic random access memory. The magnetic tunnel junction structure includes a free layer of a multi-layer structure, and an antiferromagnetic coupling layer formed by a non-magnetic metal layer is between the two free layers. The present application realizes the antiferromagnetic coupling of the two free layers through the antiferromagnetic coupling layer, which effectively increases the vertical anisotropy of the total magnetic moment and reduces the demagnetization field that occurs during the inversion process under the spin-excited write current, thereby enabling Reduce critical current while ensuring thermal stability. It is very beneficial to the improvement of the magnetic, electrical and yield rate of the magnetic random access memory, as well as the further miniaturization of the device. |
| priorityDate | 2019-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.