| abstract |
A device comprising: a semiconductor region; an interfacial layer located over the semiconductor region, the interfacial layer comprising a semiconductor oxide; a high-k dielectric layer over the interfacial layer; a hybrid layer over the high-k dielectric layer. The mixed layer includes oxygen, a metal in the high-k dielectric layer, and another metal. The work function layer is located above the mixed layer. The fill metal region is located above the work function layer. Embodiments of the present application also provide semiconductor devices and methods of manufacturing the same. |