| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7858
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2f31c00a86e3079a0d8abdd9f15c8ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57fe59b2c6975d00d18af7c95392fe82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cacc99a5d8d2d7745270341c63e2226f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b791e32a59729c95a7d8fa13a513ce4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a8be08ab0a80b392508cd32c2f8ae5b |
| publicationDate |
2021-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112750775-A |
| titleOfInvention |
Method of forming semiconductor device |
| abstract |
Here, a semiconductor device using a dielectric structure and a method for forming the semiconductor device will be described. The semiconductor device relates to a fully wound gate device, which is formed on a substrate and separated from each other by a dielectric structure. A dielectric structure is formed on the fin between the two fully wound gate devices, and the gate formed on the fin is cut into two separate gates. The two fully wound gate devices also have bottom spacers under the source/drain regions of the fully wound gate devices. Bottom spacers isolate the source/drain regions from the substrate. The dielectric structure has a shallow bottom that is higher than the bottom of the bottom spacer. |
| priorityDate |
2019-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |