| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2020-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd9dd494e5921f65ba648bcf31cabe5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03f500dc25bf3d88b6719600088aa015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e08ddef0e6636d2673b00c7bf2c499ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d54aad5c109180290342160365d73eb |
| publicationDate |
2021-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112750769-A |
| titleOfInvention |
Methods for forming stacked layers and devices formed therefrom |
| abstract |
The present disclosure relates to methods for forming stacked layers and devices formed therefrom. A method includes etching a semiconductor substrate to form a trench, wherein the semiconductor substrate includes sidewalls facing the trench; and depositing a first semiconductor layer extending into the trench. The first semiconductor layer includes a first bottom portion at the bottom of the trench and a first sidewall portion on the sidewall of the semiconductor substrate. The first sidewall portion is removed to expose the sidewall of the semiconductor substrate. The method also includes depositing a second semiconductor layer extending into the trench, wherein the second semiconductor layer includes a second bottom portion overlying the first bottom portion and is connected to the semiconductor substrate The sidewall contacts the second sidewall portion. The second sidewall portion is removed to expose the sidewall of the semiconductor substrate. |
| priorityDate |
2019-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |