http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112730520-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42abe29da32a8234eb3e0b7c634ae1b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_caacf483b6be9ae2d2677103a70559db |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00539 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00087 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-0038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00531 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
filingDate | 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_017c9fcfad143b9e30d3540daca783a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11d8ab2734488fad60837c856e58d8a2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6638e626f0e09e34bd272d1a4135eae0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7194e7c54b60147a50ff31b8680a35d8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4c15e7aeedf1bed433813e121dd05e6 |
publicationDate | 2021-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-112730520-A |
titleOfInvention | Penetration type multi-channel gas sensor of MEMS (micro-electromechanical systems) process |
abstract | A penetration type multi-channel gas sensor of an MEMS (micro-electromechanical system) process solves the problem that the response time and the recovery time of a gas sensor to low-concentration gas are long due to the fact that gas flow can only pass through the upper surface of a packaging shell of a gas sensor array chip and gas molecules reach the surface of a gas sensitive material of the gas sensor and mainly transfer mass through gas diffusion, and comprises a Si substrate, a lower surface corrosion window, a through hole and a gas sensitive film, wherein the upper surfaces of the Si substrate and the through hole are respectively provided with a first layer of Si 3 O 4 Film, first layer Si 3 O 4 The surface of the film is provided with Pt film heating wires and a first layer of Si 3 O 4 The surfaces of the film and the Pt film heating wire are provided with second layers of Si 3 O 4 The surface of Au film gas-sensitive electrode is equipped with gas-sensitive film, which is composed of first layer of Si 3 O 4 Film, Pt film heater wire, second layer Si 3 O 4 Film(s)The multilayer composite film formed by the Au film gas-sensitive electrode and the gas-sensitive film is penetrated by the upper surface corrosion window so as to have a bridge structure. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114965625-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113484472-A |
priorityDate | 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.