http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112713188-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2020-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112713188-B |
| titleOfInvention | A GaN-based enhanced MIS-HEMT device and its preparation method |
| abstract | The invention discloses a GAN-based enhanced MIS-HEMT device, which belongs to the field of microelectronics technology, and comprises a substrate, a nucleation layer, a stress regulation layer, a GaN channel layer, an insertion layer, and an Al x stacked sequentially from bottom to top. Ga 1‑X N barrier layer and cap layer, the stress regulation layer is composed of AlN/AlGaN/ SiNx /GaN cycle growth, specifically including AlN crystal nucleus layer, AlGaN stress control layer, network structure SiNx thin layer and In terms of GaN leveling layer and epitaxial materials, the stress control layer of the present invention is AlN/AlGaN/SiN X /GaN cyclic growth composite layer, which reduces the dislocation density of the material and improves the lattice quality, thereby improving the electron mobility and impact of the device. Breakthrough voltage and other characteristics; In terms of device technology, the etching of the concave gate groove is etched in two steps until the AlxGa1‑xN barrier layer is etched, which fully combines the high efficiency characteristics of dry etching and the advantages of wet etching. The advantage of low interface damage, in addition, the TMAH solution of the present invention effectively reduces the unevenness of the gate groove interface caused by uneven thermal oxidation. |
| priorityDate | 2020-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.