| abstract |
An integrated circuit device is disclosed, comprising: a fin-type active region protruding from a substrate, extending in a first direction parallel to an upper surface of the substrate, and including a first semiconductor material; an isolation layer arranged on the substrate on and covering the lower portion of the sidewall of the fin-type active region, the isolation layer includes an insulating liner conformally arranged on the lower portion of the sidewall of the fin-type active region and an insulating filling layer on the insulating liner; the cover layer, surrounding an upper surface and sidewalls of the fin-type active region, including a second semiconductor material different from the first semiconductor material, wherein the capping layer has an upper surface, sidewalls, and a faceted surface between the upper surface and the sidewalls; and a gate structure disposed on the capping layer and extending in a second direction perpendicular to the first direction. |