http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112687791-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2020-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97690b075c4da4e64fed47d67dcde27b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2b816357766ba330ccfbc88f59fe504 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_401002911f4d85f108b5110494eabbb3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78fc2f87b4f7e31a8205c286cdc5aafe |
| publicationDate | 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112687791-A |
| titleOfInvention | Semiconductor device and method for fabricating the same |
| abstract | Embodiments of the invention relate to a semiconductor device and a method of manufacturing the same. Embodiments of the present invention provide a semiconductor device comprising a diffusion barrier structure, a bottom electrode, a top electrode over the bottom electrode, a switching layer, and a capping layer. The bottom electrode is over the diffusion barrier structure. The top electrode is over the bottom electrode. The switching layer is between the bottom electrode and the top electrode, and is configured to store data. The capping layer is between the top electrode and the switching layer. The thermal conductivity of the diffusion barrier structure is greater than approximately 20W/mK. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113285020-A |
| priorityDate | 2019-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.