| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2020-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_920488942889126d3bb23bb6b5cf23ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9e11baa84633c2da4369e701357f8e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_744f200ff9c1498e3d7bf0f58811e7c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61aad4d051702a6a36d4cfd9c79ced19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e3950e1058cf964dac464057a4d7ce9 |
| publicationDate |
2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112687544-A |
| titleOfInvention |
Fin field effect transistor device and method of forming the same |
| abstract |
The present disclosure relates to fin field effect transistor devices and methods of forming the same. A method of forming a semiconductor device includes: surrounding a dummy gate disposed over a fin with a dielectric material; by removing the dummy gate and by removing upper portions of first gate spacers disposed along sidewalls of the dummy gate forming gate trenches in the material, the gate trenches including lower trenches between remaining lower portions of the first gate spacers and including upper trenches over the lower trenches; sequentially in the gate trenches forming gate dielectric layer, work function layer, and glue layer; removing glue layer and work function layer from upper trench; filling gate trench with gate electrode material after removal; and removing gate from upper trench The electrode material, the remainder of the gate electrode material forms the gate electrode. |
| priorityDate |
2019-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |