| abstract |
The subject of the present invention is atomic layer deposition of indium gallium zinc oxide. Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. IGZO films can be used, for example, as channel layers in transistor devices. In some embodiments, an atomic layer deposition process for depositing an IGZO film includes an IGZO deposition cycle that includes subjecting the substrate to a reaction space with a vapor-phase indium precursor, a vapor-phase gallium precursor, a vapor-phase zinc precursor, and The oxygen reactants are alternately and sequentially contacted. The deposition cycle can be repeated until an IGZO film of the desired thickness has been formed. In some embodiments, the deposition cycle is performed at a deposition temperature of 250°C or less. In some embodiments, the ALD deposition cycle further includes contacting the substrate with additional reactants comprising one or more of NH3 , N2O , NO2 , and H2O2. |