http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112680212-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50 |
| filingDate | 2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112680212-B |
| titleOfInvention | Synthesis method of halogen perovskite film with low lead and high fluorescence efficiency |
| abstract | The invention discloses a synthesis method of a low-lead high-fluorescence-efficiency halogen perovskite film 2 、GeBr 2 And PEABr as a raw material were weighed in a certain ratio and dissolved with a DMSO solvent. After the solution is completely dissolved, the solution is coated on a quartz plate in a suspension way, and after film forming, the solution is annealed for about 10min at 70 ℃ on a high-temperature glue baking table to obtain CsPb 1‑x Ge x Br 3 (x ═ 0,0.1,0.2,0.3,0.4, and 0.5) perovskite thin films. The invention reduces CsPb 1‑x Ge x Br 3 The difficulty and cost of synthesizing perovskite thin films. The perovskite thin film has better surface appearance and crystallinity by using an anti-solvent ethyl acetate solution and annealing treatment. |
| priorityDate | 2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.