http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112652716-A

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filingDate 2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ac5625d772ed73e6c2e7cba82d6a329
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publicationDate 2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-112652716-A
titleOfInvention Organic thin film transistor with bottom gate top contact structure and preparation method and application thereof
abstract The invention discloses an organic thin film transistor with a bottom gate top contact structure and a preparation method and application thereof. The organic thin film transistor structure is, from bottom to top, a substrate, an OTS-modified insulating layer, an active layer, and a source-drain electrode; or, from bottom to top, a substrate, aluminum, an OTS-modified insulating layer, and an active layer. and source-drain electrodes; the active layer material is PDQT. The invention uses the semiconducting polymer material PDQT as the active layer, and uses OTS to modify the insulating layer, which can significantly improve the carrier transport characteristics of the organic thin film transistor, and provide a reference for preparing an all-solution all-organic thin-film transistor device array.
priorityDate 2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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