http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112652716-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cc4e13141d402ceb885f368dfa042348 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-478 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
filingDate | 2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ac5625d772ed73e6c2e7cba82d6a329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8735b842da4b543b4dda26b95ad6ef3b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b982208dc95d8f817c4c87868e885fa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2cfb15a272023401d7dd3ac96be5700 |
publicationDate | 2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-112652716-A |
titleOfInvention | Organic thin film transistor with bottom gate top contact structure and preparation method and application thereof |
abstract | The invention discloses an organic thin film transistor with a bottom gate top contact structure and a preparation method and application thereof. The organic thin film transistor structure is, from bottom to top, a substrate, an OTS-modified insulating layer, an active layer, and a source-drain electrode; or, from bottom to top, a substrate, aluminum, an OTS-modified insulating layer, and an active layer. and source-drain electrodes; the active layer material is PDQT. The invention uses the semiconducting polymer material PDQT as the active layer, and uses OTS to modify the insulating layer, which can significantly improve the carrier transport characteristics of the organic thin film transistor, and provide a reference for preparing an all-solution all-organic thin-film transistor device array. |
priorityDate | 2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.