http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112645976-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_09839b6058c2bf40c7911d4c28d79127 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-16 |
| filingDate | 2020-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_420cd8c1e52cc5a4a93c3a2c12798da3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65748a4e4763aa51730a456d7c872942 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58bb7265874d9730476c6f3d0ebe51ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4fb0f3c7005a224739e17f9db6da6ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41e0a3fbeb7a71d805b5a65a3e9021fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97c8f00ba3644e9a6aa0d8e3970f8e78 |
| publicationDate | 2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112645976-A |
| titleOfInvention | A method for preparing methylchlorosilane-based organosilicon using chlorine-based CVD crystal thin film growth process tail gas FTrPSA |
| abstract | The invention discloses a method for preparing methylchlorosilane-based organosilicon by using the tail gas FTrPSA of a chlorine-based CVD crystal thin film growth process. , chlorosilane spray absorption, multi-stage evaporation/compression/condensation and chlorosilane medium shallow rectification process, using a kind of chlorine-based SiC-CVD crystal and or epitaxial film growth based on methyl chlorosilane-based organosilicon as precursor The exhaust gas of the process contains active components such as methyl chloride, chlorosilane, hydrogen chloride, and silicon powder. The direct synthesis method is used to prepare methylchlorosilane-based organosilicon products, including monomethylchlorosilane, dimethylchlorosilane, etc., which can be returned The recycling of the SiC-CVD process not only realizes the comprehensive utilization of the exhaust gas, but also reduces the exhaust gas emission, making up for the blank of the exhaust gas treatment technology in the SiC-cvd chlorine-based crystal or epitaxial thin film growth process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114288823-A |
| priorityDate | 2020-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.