| abstract |
It is desired to provide a solid-state imaging device that can further improve the quality and reliability of the solid-state imaging device. Provided is a solid-state imaging device including: a first semiconductor device including an imaging element that generates pixel signals in units of pixels; and a second semiconductor device embedded in the second semiconductor device using a filling member a first signal processing circuit required for signal processing of pixel signals; a third semiconductor device in which a second signal processing circuit required for signal processing of pixel signals is embedded using a buried component; and silicon-containing layers. The first semiconductor device and the second semiconductor device are electrically connected to each other, the first semiconductor device and the third semiconductor device are electrically connected to each other, the first semiconductor device, the silicon-containing layer, and the second semiconductor device are arranged in this order, and the first semiconductor device , the silicon-containing layer and the third semiconductor device are arranged in this order. |