| abstract |
The invention discloses a manufacturing method of a DFB laser epitaxial wafer. The method first uses atomic layer deposition equipment to deposit an extremely thin and dense oxide film on the epitaxial wafer, uses this as a mask for etching in non-grating areas, and adopts a holographic process. Make an asymmetric grating. The method can effectively suppress the spatial hole burning effect of the laser, improve the side mode suppression ratio of the DBF laser, optimize its spectral mode, improve the product yield of the DFB laser, and reduce the manufacturing cost; the manufacturing method uses a thin oxide film as the Compared with the traditional EBL grating or other grating manufacturing methods, the method is simple, the cost is low, and the efficiency is high; this method also provides a grating wet etching method, which avoids the traditional When preparing asymmetric gratings, the problem of inconsistent corrosion rates in different regions avoids the risk of secondary epitaxial delay and the risk of doping elements diffusing into the quantum wells along the overetched region, which improves the reliability of the product. |