| abstract |
The present invention relates to a semiconductor device comprising: a semiconductor region; a metal wiring located on a surface of the semiconductor region; an organic insulating layer on a surface of the semiconductor region, the organic insulating layer having a first opening to expose a portion of the metal wiring; a metal layer covering a part of the metal wiring exposed from the first opening and an inner surface and a peripheral portion of the first opening of the organic insulating layer; a mask covering an edge of the seed metal layer, the mask having a second opening to expose a portion of the seed metal layer; and a barrier metal layer on the seed metal layer exposed from the second opening of the mask, the barrier metal layer having an outer side surface contacting the inner side surface of the second opening of the mask, the mask mainly containing an inorganic dielectric material, and the barrier metal layer being located in a region defined by the mask in a plan view, and solder balls on the barrier metal layer and the mask that are left without being removed. |