http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112608754-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 |
| filingDate | 2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112608754-B |
| titleOfInvention | A highly selective etchant |
| abstract | The invention discloses a highly selective etching solution for highly selective etching of thermal silicon dioxide and silicon nitride. The main components include hydrofluoric acid, ammonium bifluoride, an active agent and ultrapure water. In the etching solution of the present invention, hydrofluoric acid plays the role of etching; ammonium bifluoride is used to provide HF 2 ‑ to improve the etching rate of silicon dioxide; the active agent is used to reduce the surface tension of the solution, and simultaneously forms a surface of the silicon nitride film. layer protective film to reduce the etching rate of silicon nitride. The etching solution of the invention has low surface tension, high selectivity to thermal silicon dioxide and silicon nitride, and an etching rate selection ratio of ≥80; Degree Ra<1nm. |
| priorityDate | 2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.