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filingDate 2020-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbf87532dc2a0cb71477ef85c200108b
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publicationDate 2021-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-112588303-A
titleOfInvention A kind of preparation method of bismuth selenide nanosheet and heterojunction photoelectrode based thereon
abstract The invention discloses a preparation method of bismuth selenide nanosheets and a heterojunction photoelectrode based on the same. By improving the synthesis process of Bi2O2Se nanosheets, uniform morphology, non - agglomeration and extremely thick thickness are obtained. Thin Bi 2 O 2 Se nanosheets, which were then constructed with WO 3 nanosheets as heterojunction photoelectrodes by suitable process methods, the two exhibited a strong synergistic effect, and the obtained heterojunction had excellent PEC performance. The preparation method of the Bi 2 O 2 Se nanosheet and the construction method of the heterojunction of the present invention have the advantages of simple method, high safety performance and no pollution.
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